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FTD2003 N-Channel Silicon MOSFET

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Description

www.DataSheet4U.com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE .

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Features

* Low ON-state resistance.
* 2.5V drive.
* Mount height of 1.1mm.
* Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Diss

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