FTD2003 - N-Channel Silicon MOSFET

Datasheet Summary

Features

Low ON-state resistance.
2.5V drive.
Mount height of 1.1mm.
Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage For.

Sanyo Semiconductor Corporation

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Datasheet Details

Part number	FTD2003
Manufacturer	Sanyo Semiconductor Corporation
File Size	39.60 KB
Description	N-Channel Silicon MOSFET
Datasheet	FTD2003 Datasheet
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www.DataSheet4U.com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm.

Published: Mar 7, 2009 |