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Ordering number:ENN6429
N-Channel Silicon MOSFET
FTD2005
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2005]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
1 0.25
4
(0.95)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 20 ±10 1 4 0.8 1.0 150 –55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1.0
0.
FTD2005 Datasheet
