Part number:
FTD2013
Manufacturer:
Sanyo Semicon Device
File Size:
76.54 KB
Description:
N-channel mosfet.
* Low ON resistance.
* 2.5V drive.
* Mounting height 1.1mm.
* Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2013] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage
FTD2013
Sanyo Semicon Device
76.54 KB
N-channel mosfet.
📁 Related Datasheet
FTD2011 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6072A
N-Channel Silicon MOSFET
FTD2011
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height .
FTD2011A - N-Channel MOSFET
(Sanyo Semicon Device)
FTD2011A
No.
FTD2011A
µ
µ µ Ω Ω
0.65
8
5
0.5
1
0.25
4
(0.95)
4.5 6.4
0.95
3.0
0.425
0.125
0.1
1.0
FTD2011A
VIN 4V 0V VIN
VDD=10V.
FTD2012 - N-Channel MOSFET
(Sanyo Semicon Device)
FTD2012
N- Channel Silicon MOS FET Load S/W USE
TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enab.
FTD2014 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6267
N-Channel Silicon MOSFET
FTD2014
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.
FTD2015 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6393
N-Channel Silicon MOSFET
FTD2015
Load Switching Applications
Features
· Low ON resistance. · 4V drive. · Mounting height 1.1.
FTD2017 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6361
N-Channel Silicon MOSFET
FTD2017
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.
FTD2017 - Dual N-Channel 25V MOSFET
(VBsemi)
FTD2017-VB
FTD2017-VB Datasheet
Dual N-Channel 25-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V 25
0.03.
FTD2017M - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
• • • • •
N-Channel Silicon MOSFET
General-Purpose Switchin.
