FTD2058 - NPN Transistor

Datasheet Summary

Features

Low VCE(sat): VCE(sat)=1.0V(Max. ) (IC/IB=2A/0.2A) Complementary to FTB1366.

First Silicon

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Datasheet Details

Part number	FTD2058
Manufacturer	First Silicon
File Size	286.18 KB
Description	NPN Transistor
Datasheet	FTD2058 Datasheet
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SEMICONDUCTOR TECHNICAL DATA FTD2058 FTD2058 TRANSISTOR (NPN) FEATURES Low VCE(sat): VCE(sat)=1.0V(Max.) (IC/IB=2A/0.2A) Complementary to FTB1366 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 3 A PC Collector power dissipation 2W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-220F 1. BASE 2. COLLECTOR 3.

Published: Jul 13, 2016 |