FW114 - P-Channel Silicon MOS FET

Sanyo Semicon Device

Datasheet Details

Low ON resistance.
2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1un.

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Published: Mar 23, 2005 |