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FW115 - P-Channel Silicon MOS FET

Datasheet Summary

Features

  • 4V drive.
  • Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SO.

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Datasheet Details

Part number FW115
Manufacturer Sanyo Semicon Device
File Size 46.56 KB
Description P-Channel Silicon MOS FET
Datasheet download datasheet FW115 Datasheet
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Full PDF Text Transcription

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Ordering number :EN5849 P-Channel Silicon MOS FET FW115 S/W Load Applications Features · 4V drive. · Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.4 Conditions Ratings –30 ±20 –3 6.0 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.8mm) 1unit Mounted on ceramic board (1200mm2×0.8mm) –32 1.7 2.
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