FW115 - P-Channel Silicon MOS FET

Sanyo Semicon Device

Datasheet Details

4V drive.
Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SO.

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Published: Mar 23, 2005 |