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FW133 - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2129 [FW133] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
FW103 P-Channel Silicon MOSFET
FW111 P-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6784 FW133 P-Channel Silicon MOSFET FW133 Load Switching Applications Features • • Package Dimensions unit : mm 2129 [FW133] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 0.1 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Unit -30 ±20 --7 -32 1.7 2.