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FW115 - P-Channel Silicon MOS FET

Key Features

  • 4V drive.
  • Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SO.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
FW111 P-Channel Silicon MOSFET
FW113 P-Channel Silicon MOS FET
FW114 P-Channel Silicon MOS FET
FW103 P-Channel Silicon MOSFET
FW133 P-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number :EN5849 P-Channel Silicon MOS FET FW115 S/W Load Applications Features · 4V drive. · Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.4 Conditions Ratings –30 ±20 –3 6.0 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.8mm) 1unit Mounted on ceramic board (1200mm2×0.8mm) –32 1.7 2.