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FW114 - P-Channel Silicon MOS FET

Key Features

  • Low ON resistance.
  • 2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1un.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
FW111 P-Channel Silicon MOSFET
FW113 P-Channel Silicon MOS FET
FW115 P-Channel Silicon MOS FET
FW103 P-Channel Silicon MOSFET
FW133 P-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number :EN5848 P-Channel Silicon MOS FET FW114 S/W Load Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm) 1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Ratings –20 ±10 –3 –32 1.7 2.