Datasheet4U Logo Datasheet4U.com

FW114 - P-Channel Silicon MOS FET

Datasheet Summary

Features

  • Low ON resistance.
  • 2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1un.

📥 Download Datasheet

Datasheet preview – FW114

Datasheet Details

Part number FW114
Manufacturer Sanyo Semicon Device
File Size 44.17 KB
Description P-Channel Silicon MOS FET
Datasheet download datasheet FW114 Datasheet
Additional preview pages of the FW114 datasheet.

📁 Similar Datasheet

  • FW100 - 96 Watt AC Adapter (ETC)
  • FW101 - SCATTERED LIGHT DUST MEASURING DEVICES (SICK)
  • FW101Ex - SCATTERED LIGHT DUST MEASURING DEVICES (SICK)
  • FW10A - Fusible Power Resistors (BOURNS)
  • FW10G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
  • FW156-TL-E - Dual P-Channel 60V MOSFET (VBsemi)
  • FW1600010 - CRYSTAL (PSE Technology)
  • FW168-TL-E - Dual P-Channel MOSFET (VBsemi)
Other Datasheets by Sanyo Semicon Device
  • FW111 - P-Channel Silicon MOSFET
  • FW113 - P-Channel Silicon MOS FET
  • FW115 - P-Channel Silicon MOS FET
  • FW103 - P-Channel Silicon MOSFET
  • FW133 - P-Channel Silicon MOSFET
  • FW156 - P-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number :EN5848 P-Channel Silicon MOS FET FW114 S/W Load Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm) 1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Ratings –20 ±10 –3 –32 1.7 2.
Published: |