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FW103 - P-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting.
  • Matched pair capability. Package Dimensions unit: mm 2129-SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on.

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Part Number Description
FW111 P-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features • Low ON resistance • Ultrahigh-speed switching. • Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting. • Matched pair capability. Package Dimensions unit: mm 2129-SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Total Dissipation PT Mounted on a ceramic board (1000mm2×0.