FW103 - P-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Low ON resistance.
Ultrahigh-speed switching.
Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting.
Matched pair capability. Package Dimensions unit: mm 2129-SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on.

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Published: Mar 23, 2005 |