FW113 - P-Channel Silicon MOS FET

Sanyo Semicon Device

Datasheet Details

4V drive.
Low ON resistance. Package Dimensions unit:mm 2129 [FW113] 85 0.1 1.5 1.8max 4.4 0.3 6.0 Specifications Absolute Maximum Ratings at Ta = 25˚C 1 5.0 4 0.595 1.27 0.43 1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tc.

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Published: Mar 23, 2005 |