* Low forward voltage (VF max=0.85V).
* Fast reverse recovery time (trr max=45ns).
* Low switching noise.
* Low leakage current and high reliability due to highly reliable planar structure. A:Anode C:Cathode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete
SB100-18
Sanyo Semicon Device
80.47 KB
180v/ 10a rectifier.
Ordering number :EN2580A SB100-18 Schottky Barrier Diode (Twin Type Cathode Common) 180V, 10A Rectifier Applications High frequency rect.
📁 Related Datasheet
SB100-05H 50V/ 10A Rectifier (Sanyo Semicon Device)
SB100-05J 50V/ 10A Rectifier (Sanyo Semicon Device)
SB100-09 90V/ 10A Rectifier (Sanyo Semicon Device)
SB100-09J 90V/ 10A Rectifier (Sanyo Semicon Device)
SB100-09K 90V/ 10A Rectifier (Sanyo Semicon Device)
SB10015M Schottky Barrier Diode (ON Semiconductor)
SB10-015C 15V/ 1A Rectifier (Sanyo Semicon Device)
SB10-015P 15V/ 1A Rectifier (Sanyo Semicon Device)
SB10-03A2 30V/ 1.0A Rectifier (Sanyo Semicon Device)
SB10-03A2 Schottky Rectifier (ON Semiconductor)
