SBE001 - 30V/ 2A Rectifier

Sanyo Semicon Device

Datasheet Details

Unit V V A A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=500µA IF=2A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2×0.8mm) Conditons Ratings min 30 0.55 100 70 20 110 typ max Unit V V µA pF ns ˚C/W Marking : SA Any and all SANYO products described or contained herein do not have s.

📁 SBE001 Similar Datasheet

SBE808 - Schottky Barrier Diode (ON Semiconductor)
SBE809 - 30V 70mA Rectifier (Sanyo Semiconductor)
SBE812 - Schottky Barrier Diode (ON Semiconductor)
SBE813 - Schottky Barrier Diode (ON Semiconductor)
SBE818 - Schottky Barrier Diode (ON Semiconductor)
SBESD15C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD24C-C - Bi-Direction ESD Protection Diode (SeCoS)
SBESD5301N - Ultra Low Capacitance ESD Protection (SeCoS Halbleitertechnologie)

Other Datasheets by Sanyo Semicon Device

Published: Apr 8, 2005 |