* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
SFT1201
Sanyo Semicon Device
78.51 KB
Npn epitaxial planar silicon transistor high-voltage switching applications.
Ordering number : ENA1168 SFT1201 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1201 Applications NPN Epitaxial Planar Silicon.
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