SFT1201 - NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1201 Features
* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
