SFT1201 - NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Sanyo Semicon Device

Datasheet Details

Part number: SFT1201
Manufacturer: Sanyo Semicon Device
File Size: 78.51 KB
Datasheet: SFT1201_SanyoSemiconDevice.pdf
Description: NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Other Datasheets by Sanyo Semicon Device

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Published: Feb 24, 2010 |