Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.
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