* Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
SFT1101
Sanyo Semicon Device
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Pnp epitaxial planar silicon transistor high-voltage switching applications.
Ordering number : ENA1166 SFT1101 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1101 Applications PNP Epitaxial Planar Silicon.
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