* Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
SFT1102
Sanyo Semicon Device
78.51 KB
Pnp epitaxial planar silicon transistor high-voltage switching applications.
Ordering number : ENA1167 SFT1102 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1102 Applications PNP Epitaxial Planar Silicon.
📁 Related Datasheet
SFT1101 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications (Sanyo Semicon Device)
SFT11 (SFT11 - SFT18) Super Fast Rectifiers (Taiwan Semiconductor)
SFT1192 PNP TRANSISTOR (SSDI)
SFT1192-59 PNP TRANSISTOR (SSDI)
SFT1192S.5 PNP Transistor (SSDI)
SFT11G (SFT11G - SFT18G) Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)
SFT1 SUPER FAST RECTIFIER DIODES (EIC discrete Semiconductors)
SFT1 (SFT1 - SFT9) SUPER FAST RECTIFIER DIODES (SynSemi)
SFT10.7 CERAMIC FILTER (Murata)
SFT10.7MA5 FILTERS (Murata Electronics)
TAGS
Image Gallery
