2SA2127 - PNP Epitaxial Planar Silicon Transistor

Sanyo

Datasheet Details

Part number	2SA2127
Manufacturer	Sanyo
File Size	56.91 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA2127_Sanyo.pdf

Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings --50 --50 --6 --2 --4 --400 1 150 --55 to +150 Unit V V V A.

📁 2SA2127 Similar Datasheet

2SA2120 - PNP Transistor (INCHANGE)
2SA2121 - Silicon PNP Power Transistor (Inchange Semiconductor)
2SA2124 - PNP Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2125 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2126 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA2101 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
2SA2102 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
2SA2112 - PNP Transistors (Sanyo Semicon Device)

Other Datasheets by Sanyo

Published: Nov 25, 2013 |