* Adoption of MBIT process
* Large current capacitance (IC=
* 10A)
* Low collector-to-emitter saturation voltage (VCE(sat)=
* 250mV(typ.))
* High-speed switching (tf=22ns(typ.)) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Bas
2SA2222SG Datasheet (176.46 KB)
2SA2222SG
Sanyo
176.46 KB
Pnp epitaxial planar silicon transistor.
Ordering number : ENA1799
2SA2222SG
SANYO Semiconductors
DATA SHEET
2SA2222SG
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Appli.
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