* Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
2SA2203
Sanyo Semicon Device
65.71 KB
Pnp epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0542 2SA2203 SANYO Semiconductors DATA SHEET 2SA2203 Applications PNP Epitaxial Planar Silico.
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