* Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volt
2SA2209
Sanyo Semicon Device
81.97 KB
Pnp epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0235 2SA2209 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2209 Application.
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