Datasheet4U Logo Datasheet4U.com

2SA2215 - Silicon PNP Transistor

📥 Download Datasheet

Datasheet preview – 2SA2215

Datasheet Details

Part number 2SA2215
Manufacturer Toshiba
File Size 137.10 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA2215 Datasheet
Additional preview pages of the 2SA2215 datasheet.

📁 Similar Datasheet

  • 2SA2210 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA2210 - Bipolar Transistor (ON Semiconductor)
  • 2SA2210 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SA2219 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA2201 - PNP Epitaxial Planar SIlicon Transistor (Sanyo)
  • 2SA2202 - Bipolar Transistor (ON Semiconductor)
  • 2SA2203 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA2204 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA2205 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA2205 - Bipolar Transistor (ON Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 2SA2215 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC IC Collector current Pulse ICP −2.5 A −4.
Published: |