* Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
2SA2201
Sanyo
128.98 KB
Pnp epitaxial planar silicon transistor.
Ordering number : ENA0581 2SA2201 SANYO Semiconductors DATA SHEET 2SA2201 Applications PNP Epitaxial Planar Silicon Transistor High-Vo.
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