Datasheet4U Logo Datasheet4U.com

C3142 - 2SC3142

Datasheet Summary

Features

  • FBET series.
  • Compact package enabling compactness of sets.
  • High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Paramete.

📥 Download Datasheet

Datasheet preview – C3142

Datasheet Details

Part number C3142
Manufacturer Sanyo
File Size 190.14 KB
Description 2SC3142
Datasheet download datasheet C3142 Datasheet
Additional preview pages of the C3142 datasheet.

📁 Similar Datasheet

  • C3143 - 2SC3143 (Sanyo Semicon Device)
  • C3147 - Silicon NPN POWER TRANSISTOR (HGSemi)
  • C3148 - 2SC3148 (Toshiba Semiconductor)
  • C3149 - 2SC3149 (Sanyo Semicon Device)
  • C3101 - 2SC3101 (Mitsubishi Electronics)
  • C3102 - 2SC3102 (Mitsubishi Electric Semiconductor)
  • C3112 - 2SC3112 (Toshiba Semiconductor)
  • C3113 - 2SC3113 (Toshiba Semiconductor)
  • C3114 - 2SC3114 (Sanyo Semicon Device)
  • C3117 - 2SC3117 (Sanyo Semicon Device)
Other Datasheets by Sanyo

Full PDF Text Transcription

Click to expand full text
Ordering number:EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ).
Published: |