Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW=10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID ID IDP PD PT Tch
Tstg
Conditions
Duty cycle≤1% Duty cycle≤1% Wh.
