2SC3790 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3790
Manufacturer	Sanyo Semicon Device
File Size	41.38 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3790_SanyoSemiconDevice.pdf

High breakdown voltage (VCEO≥300V).
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

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Published: Mar 22, 2005 |