2SC3792 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3792
Manufacturer	Sanyo Semicon Device
File Size	29.51 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3792_SanyoSemiconDevice.pdf

Adoption of FBET process.
High DC current gain.
High VEBO (VEBO≥25V).
High reverse hFE (150 typ).
Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temper.

📁 2SC3792 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |