Datasheet4U Logo Datasheet4U.com

D2017M FTD2017M

D2017M Description

Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M .

D2017M Applications

* Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power D

📥 Download Datasheet

Preview of D2017M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
D2017M
Manufacturer
Sanyo Semicon Device
File Size
72.08 KB
Datasheet
D2017M_SanyoSemiconDevice.pdf
Description
FTD2017M

📁 Related Datasheet

  • D2017UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2010UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2011UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2012 - NPN Silicon Power Transistor (STMicroelectronics)
  • D2012UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2013UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2014UK - RF SILICON FET (Seme LAB)
  • D2015UK - METAL GATE RF SILICON FET (Seme LAB)

📌 All Tags

FTD2017M Sanyo Semicon Device
Sanyo Semicon Device D2017M-like datasheet