SDG5521C N and P-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie

Description

SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SDG5521C
Manufacturer: SeCoS Halbleitertechnologie
File Size: 93.46 KB
Datasheet: SDG5521C-SeCoSHalbleitertechnologie.pdf
Description: N and P-Ch Enhancement Mode Power MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2
* 3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E PACKAGE INFORMATION Package DFN2
* 3 MPQ 3K Leader Size 13’ inch Millimeter Min. Max. 3.

Applications

* are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2

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SDG5521C and P-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

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