SDG5521C Datasheet (SeCoS Halbleitertechnologie) - N and P-Ch Enhancement Mode Power MOSFET

SDG5521C, N and P-Ch Enhancement Mode Power MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA c

SDG5521C Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2

* 3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E PACKAGE INFORMATION Package DFN2

* 3 MPQ 3K Leader Size 13’ inch Millimeter Min. Max. 3.