SDG5521C Datasheet - SeCoS Halbleitertechnologie

SDG5521C N and P-Ch Enhancement Mode Power MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA c.

SDG5521C Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2

* 3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E PACKAGE INFORMATION Package DFN2

* 3 MPQ 3K Leader Size 13’ inch Millimeter Min. Max. 3.

SDG5521C Datasheet (93.46 KB)

SDG5521C Datasheet Preview — Preview of SDG5521C PDF

Datasheet Details

Part number:

SDG5521C

Manufacturer:

SeCoS Halbleitertechnologie

File Size:

93.46 KB

Description:

N and p-ch enhancement mode power mosfet.

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SDG5521C and P-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

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