Datasheet Details
- Part number
- SMS501DE
- Manufacturer
- SeCoS Halbleitertechnologie
- File Size
- 558.84 KB
- Datasheet
- SMS501DE-SeCoSHalbleitertechnologie.pdf
- Description
- N-Channel MOSFET
SMS501DE Description
Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most sync.
SMS501DE Features
* Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available
MARKING
501DE
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF. A B C D E F
Millimeter Min. Max. 2.7
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