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SMS501DE N-Channel MOSFET

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Description

Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most sync.

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Features

* Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.7

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N-Channel MOSFET SeCoS Halbleitertechnologie
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