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SMS006N01T1 MOSFET

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Description

Main Product Characteristics: VDSS 60V D RDS(on) 1.3mΩ (typ.) ID 360A G S S S SSS S .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number
SMS006N01T1
Manufacturer
Silikron
File Size
376.31 KB
Datasheet
SMS006N01T1-Silikron.pdf
Description
MOSFET

Features

* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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