SMS006N01T1
Silikron
376.31kb
Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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SMS006N02J7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
60V
RDS(on) 1.9mΩ (typ.)
ID
200A
PDFN5x6-8L
Features and Benefits:
Advanced MOSFET process technology Sp.
SMS006N05J7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
60V
RDS(on) 4.7mΩ (typ.)
ID
88A
PDFN5x6-8L
Features and Benefits:
Advanced MOSFET process technology Spe.
SMS006N05J8 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
60V
RDS(on) 4.8mΩ(typ.)
ID
60A
PDFN 3*3-8L
Features and Benefits:
Advanced MOSFET process technology Spe.
SMS006N09C1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
60V
RDS(on) 8.8mΩ (typ.)
ID
60A
D
S G TO-252
Features and Benefits:
Advanced MOSFET process technology S.
SMS004N03A1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 1.65mΩ (typ.)
ID
140A
SMS004N03A1/SMS004N03D1
TO-220 SMS004N03A1
TO-263 SMS004N03D1
Schematic .
SMS004N03D1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 1.65mΩ (typ.)
ID
140A
SMS004N03A1/SMS004N03D1
TO-220 SMS004N03A1
TO-263 SMS004N03D1
Schematic .
SMS004N8EJ7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 0.76mΩ (typ.)
ID
250A
PDFN5x6-8L
Features and Benefits:
Advanced MOSFET process technology S.
SMS010N02D1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 1.8mΩ (typ.)
ID
224A
TO-263 (D2PAK)
Features and Benefits:
Advanced MOSFET process technology.
SMS010N03D1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 2.9mΩ (typ.)
ID
120A
TO-263 (D2PAK)
Features and Benefits:
Advanced MOSFET process technology.
SMS010N04A1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 4.2mΩ (typ.)
ID
127A
TO-220
Features and Benefits:
Advanced MOSFET process technology Speci.