* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature Description: It utilizes the latest processing
SMS004N03A1 Datasheet (300.42 KB)
SMS004N03A1
Silikron
300.42 KB
Mosfet.
Main Product Characteristics:
VDSS
40V
RDS(on) 1.65mΩ (typ.)
ID
140A
SMS004N03A1/SMS004N03D1
TO-220 SMS004N03A1
TO-263 SMS004N03D1
Schematic .
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