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SSU04N65 N-Channel MOSFET

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Description

SSU04N65 Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halog.
The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most.

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Features

*  Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Mi

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N-Channel MOSFET SeCoS Halbleitertechnologie
SeCoS Halbleitertechnologie SSU04N65-like datasheet