Datasheet4U Logo Datasheet4U.com

SSU1N60A

Advanced Power MOSFET

SSU1N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2.

SSU1N60A Datasheet (286.48 KB)

Preview of SSU1N60A PDF

Datasheet Details

Part number:

SSU1N60A

Manufacturer:

Fairchild Semiconductor

File Size:

286.48 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSU1N60B 600V N-Channel MOSFET (Fairchild Semiconductor)

SSU1N50B 520V N-Channel MOSFET (Fairchild Semiconductor)

SSU102N08S-C N-Channel MOSFET (SeCoS)

SSU12N70H-C N-Channel Super Junction Power MOSFET (SeCoS)

SSU130N06S-C N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSU130N06SV-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)

SSU04N65 N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSU07N65SL N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSU24N60H-C N-Channel Super Junction Power MOSFET (SeCoS)

SSU2N60A Advanced Power MOSFET (Fairchild Semiconductor)

TAGS

SSU1N60A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSU1N60A Datasheet Preview Page 2 SSU1N60A Datasheet Preview Page 3

SSU1N60A Distributor