SSU1N60A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSU1N60A
Manufacturer	Fairchild ↗ Semiconductor
File Size	286.48 KB
Description	Advanced Power MOSFET
Datasheet	SSU1N60A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) D.

📁 SSU1N60A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Oct 9, 2007 |