5 views

SSU2N60B Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

SSU2N60B Features

* 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK SSR Series I-PAK G D S SSU Seri

SSU2N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSU2N60B Datasheet (644.85 KB)

SSU2N60B Datasheet Preview — Preview of SSU2N60B PDF

Datasheet Details

Part number:

SSU2N60B

Manufacturer:

Fairchild Semiconductor

File Size:

644.85 KB

Description:

600v n-channel mosfet.

📁 Related Datasheet

SSU2N60A Advanced Power MOSFET (Fairchild Semiconductor)

SSU24N60H-C N-Channel Super Junction Power MOSFET (SeCoS)

SSU04N65 N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSU07N65SL N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSU102N08S-C N-Channel MOSFET (SeCoS)

SSU12N70H-C N-Channel Super Junction Power MOSFET (SeCoS)

SSU130N06S-C N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSU130N06SV-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)

SSU1N50B 520V N-Channel MOSFET (Fairchild Semiconductor)

SSU1N60A Advanced Power MOSFET (Fairchild Semiconductor)

TAGS

SSU2N60B 600V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

SSU2N60B Features

SSU2N60B General Description

Datasheet Details

File Size:

Description:

SSU2N60B Distributor