SSU2N60A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSU2N60A
Manufacturer	Fairchild ↗ Semiconductor
File Size	261.94 KB
Description	Advanced Power MOSFET
Datasheet	SSU2N60A-FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ. ) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC) Drain Current-Pulse.

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Published: Jul 2, 2015 |