* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min.
SSU07N65SL Datasheet (568.28 KB)
SSU07N65SL
SeCoS Halbleitertechnologie
568.28 KB
N-channel mosfet.
SSU07N65SL
Elektronische Bauelemente 7A , 650V , RDS(ON) 1.4Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies hal.
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