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SSU1N60B, SSR-1N6 600V N-Channel MOSFET

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Description

SSR1N60B / SSU1N60B November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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This datasheet PDF includes multiple part numbers: SSU1N60B, SSR-1N6. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SSU1N60B, SSR-1N6
Manufacturer
Fairchild Semiconductor
File Size
637.04 KB
Datasheet
SSR-1N6-0B.pdf
Description
600V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSU1N60B, SSR-1N6.
Please refer to the document for exact specifications by model.

Features

* 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK SSR Series I-PAK G D S SSU Series

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