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SSU4N60B

N-Channel MOSFET

SSU4N60B Features

* 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S

SSU4N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSU4N60B Datasheet (664.43 KB)

Preview of SSU4N60B PDF

Datasheet Details

Part number:

SSU4N60B

Manufacturer:

Fairchild Semiconductor

File Size:

664.43 KB

Description:

N-channel mosfet.

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SSU4N60B N-Channel MOSFET Fairchild Semiconductor

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