* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available TO-263 MARKING 40N01 Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch 1 Gate 2 Drain 3 Source REF. A b L4 c L
SSU40N01 Datasheet (609.10 KB)
SSU40N01
SeCoS
609.10 KB
N-channel mosfet.
Elektronische Bauelemente
SSU40N01
149A , 40V , RDS(ON) 2.2mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
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