* Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K LeaderSize 7’
2SB1386
SeCoS
160.71 KB
Pnp silicon low frequency transistor.
Elektronische Bauelemente
2SB1386
-5A, -30V PNP Silicon Low Frequency Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fr.
📁 Related Datasheet
2SB1381 - TRANSISTOR
(Toshiba Semiconductor)
.
2SB1381 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB1381
DESCRIPTION ·With TO-220F package ·Compleme.
2SB1381 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1381
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
.
2SB1382 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25.
2SB1382 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 200.
2SB1382 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Darlington Power Transistors
2SB1382
DESCRIPTION ·With TO-3PML packag.
2SB1383 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1383 –120 –120 –6 –25(Pulse–40) –2 120(Tc=2.
2SB1383 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown.
