SCG4153

N-Channel Enhancement Mode MOSFET

SeCoS

SCG4153 General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC .

SCG4153 Datasheet (677.75 KB)

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SCG4153

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SeCoS

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677.75 KB

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N-channel enhancement mode mosfet.
Elektronische Bauelemente SCG4153 0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

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SCG4153 N-Channel Enhancement Mode MOSFET SeCoS

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SCG4153 General Description

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