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SCG2019 Datasheet - SeCoS

SCG2019 P-Channel Enhancement Mode MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA * Trench Technology * Supper high density cell design * Excellent ON resistance * Extremely Low Threshold Vol.

SCG2019-SeCoS.pdf

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Datasheet Details

Part number:

SCG2019

Manufacturer:

SeCoS

File Size:

696.10 KB

Description:

P-channel enhancement mode mosfet.

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SCG2019 SCG2019 P-Channel Enhancement Mode MOSFET SeCoS

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