SCG2019

P-Channel Enhancement Mode MOSFET

SeCoS

SCG2019 General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA
* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Threshold Vol.

SCG2019 Datasheet (696.10 KB)

SCG2019 Datasheet Preview — Preview of SCG2019 PDF

Datasheet Details

Part number:

SCG2019

Manufacturer:

SeCoS

File Size:

696.10 KB

Description:

P-channel enhancement mode mosfet.
Elektronische Bauelemente SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifie.

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SCG2019 P-Channel Enhancement Mode MOSFET SeCoS

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SCG2019 General Description

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