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SGM2310 N-Channel MOSFET

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Description

Elektronische Bauelemente SGM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product .
SOT-89 The SGM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness.

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Datasheet Specifications

Part number
SGM2310
Manufacturer
SeCoS
File Size
483.11 KB
Datasheet
SGM2310-SeCoS.pdf
Description
N-Channel MOSFET

Features

* Small Package Outline
* Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction

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