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SGM2306 - N-Channel MOSFET

SGM2306 Description

SGM2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET .
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the low.

SGM2306 Features

* Capable Of 2.5V Gate Drive
* Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction

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Datasheet Details

Part number
SGM2306
Manufacturer
SeCoS
File Size
477.43 KB
Datasheet
SGM2306-SeCoS.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SeCoS
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