* Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.7
SGM2310A
SeCoS
0.98 MB
N-channel mosfet.
Elektronische Bauelemente
SGM2310A
5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifi.
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