* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* 100% EAS Guaranteed
* Green Device Available A BC D Gate GE Drain
* Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.4
SID04N65SL Datasheet (591.97 KB)
SID04N65SL
SeCoS
591.97 KB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente
SID04N65SL
4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
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