SID04N65SL - N-Ch Enhancement Mode Power MOSFET
SID04N65SL Features
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* 100% EAS Guaranteed
* Green Device Available A BC D Gate GE Drain
* Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.4
