SID04N65SL N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SID04N65SL 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mos.

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Datasheet Specifications

Part number: SID04N65SL
Manufacturer: SeCoS
File Size: 591.97 KB
Datasheet: SID04N65SL-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* 100% EAS Guaranteed
* Green Device Available A BC D  Gate GE  Drain
*  Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.4

SID04N65SL Distributors

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SID04N65SL N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SID04N65SL-like datasheet