SID05N60J N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SID05N60J 5A, 600V, RDS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently.

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Datasheet Specifications

Part number: SID05N60J
Manufacturer: SeCoS
File Size: 267.88 KB
Datasheet: SID05N60J-SeCoS.pdf
Description: N-Channel MOSFET

Features

* Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse A

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SID05N60J N-Channel MOSFET SeCoS

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