SID05N60J - N-Channel MOSFET
This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently.
This new device also offers a drain-to-source diode fast recovery time.
Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, pow
SID05N60J Features
* Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse A
