* RDS(on) ≦ 100mΩ @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability MARKING 15N10 Date Code PACKAGE INFORMATION Package MPQ TO-251 2.5K Leader Size 13’ inch TO-251 A B GE K F C D H MJ P REF. A B C D E F Milli
SID15N10 Datasheet (752.70 KB)
SID15N10
SeCoS
752.70 KB
N-channel mosfet.
Elektronische Bauelemente
SID15N10
15A, 100V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies hal.
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